FORMING A VTFT WITH ALIGNED GATE

摘要

A method of forming a gate layer of a thin film transistor includes providing a substrate including a gate structure having a reentrant profile. A conformal conductive inorganic thin film is deposited over the gate structure and in the reentrant profile. A photoresist is deposited on the conformal conductive inorganic thin film over the gate structure and filling the reentrant profile. The photoresist is exposed from a side of the photoresist opposite the substrate allowing the photoresist in the reentrant profile to remain unexposed. The conformal conductive inorganic thin film is etched in areas not protected by the photoresist to form a patterned conductive gate layer located in the reentrant profile of the gate structure.

主权项

1. A method of forming a gate layer of a thin film transistor comprising:
providing a substrate including a gate structure having a reentrant profile; depositing a conformal conductive inorganic thin film over the gate structure and in the reentrant profile; depositing a photoresist on the conformal conductive inorganic thin film over the gate structure and filling the reentrant profile; exposing the photoresist from a side of the photoresist opposite the substrate allowing the photoresist in the reentrant profile to remain unexposed; and etching the conformal conductive inorganic thin film in areas not protected by the photoresist to form a patterned conductive gate layer located in the reentrant profile of the gate structure.