发明名称 |
POWER STORAGE UNIT AND SOLAR POWER GENERATION UNIT |
摘要 |
Disclosed is a power storage unit which can safely operate over a wide temperature range. The power storage unit includes: a power storage device; a heater for heating the power storage device; a temperature sensor for sensing the temperature of the power storage device; and a control circuit configured to inhibit charge of the power storage device when its temperature is lower than a first temperature or higher than a second temperature. The first temperature is exemplified by a temperature which allows the formation of a dendrite over a negative electrode of the power storage device, whereas the second temperature is exemplified by a temperature which causes decomposition of a passivating film formed over a surface of a negative electrode active material. |
申请公布号 |
US2015255839(A1) |
申请公布日期 |
2015.09.10 |
申请号 |
US201514715640 |
申请日期 |
2015.05.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TAKAHASHI Minoru;YAMAZAKI Shunpei;HIROKI Masaaki;TAKAHASHI Kei;MOMO Junpei |
分类号 |
H01M10/6571;H02J7/35;H01M10/46;H01M10/48 |
主分类号 |
H01M10/6571 |
代理机构 |
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代理人 |
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主权项 |
1. A power storage unit comprising:
a power storage device; a first transistor; a diode; a heater; a temperature sensor; and a resistor, wherein: a positive electrode of the power storage device is electrically connected to a drain of the first transistor and an anode of the diode; a negative electrode of the power storage device is electrically connected to a first terminal of the temperature sensor and a first terminal of the resistor; a second terminal of the resistor is electrically connected to a first terminal of the heater and a gate of the first transistor; and a second terminal of the heater is electrically connected to a source of the first transistor and a cathode of the diode. |
地址 |
Atsugi-shi JP |