| 发明名称 |
PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH ENHANCED STABILITY AND METHOD TO FORM SAME |
| 摘要 |
Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and methods of fabricating perpendicular STTM devices with enhanced stability are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A free magnetic layer is disposed above the dielectric layer. A conductive oxide material layer is disposed on the free magnetic layer. |
| 申请公布号 |
US2015255711(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201514723310 |
申请日期 |
2015.05.27 |
| 申请人 |
Doyle Brian S.;Kuo Charles C.;Oguz Kaan;Shah Uday;Karpov Elijah V.;Mojarad Roksana Golizadeh;Doczy Mark L.;Chau Robert S. |
发明人 |
Doyle Brian S.;Kuo Charles C.;Oguz Kaan;Shah Uday;Karpov Elijah V.;Mojarad Roksana Golizadeh;Doczy Mark L.;Chau Robert S. |
| 分类号 |
H01L43/10;H01L43/08;H01L43/12 |
主分类号 |
H01L43/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A material layer stack for a magnetic tunneling junction, the material layer stack comprising:
a fixed magnetic layer; a dielectric layer disposed above the fixed magnetic layer; a free magnetic layer disposed above the dielectric layer; and a conductive oxide material layer disposed on the free magnetic layer, with an interface between the conductive oxide material layer and the free magnetic layer, wherein the interface between the conductive oxide material layer and the free magnetic layer provides a perpendicular magnetic component for the magnetic tunneling junction. |
| 地址 |
Portland OR US |
