| 发明名称 |
MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes an underlying structure having conductivity provided on the substrate and including a first layer with a polycrystalline structure and a second layer with an amorphous structure, and a magnetoresistive element provide on the underlying layer. The magnetoresistive element includes a first magnetic layer provided on the underlying layer, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer. |
| 申请公布号 |
US2015255706(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201414322631 |
申请日期 |
2014.07.02 |
| 申请人 |
IWAYAMA Masayoshi;KANAYA Hiroyuki |
发明人 |
IWAYAMA Masayoshi;KANAYA Hiroyuki |
| 分类号 |
H01L43/02;H01L43/12 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory comprising:
a substrate; an underlying layer having conductivity provided on the substrate and including a first layer of polycrystalline structure and a second layer of an amorphous structure; and a magnetoresistive element provided on the underlying layer, the magnetoresistive element comprising: a first magnetic layer provided on the underlying layer; a non-magnetic layer provided on the first magnetic layer; and a second magnetic layer provided on the non-magnetic layer. |
| 地址 |
Seoul KR |
