发明名称 |
Light Emitting Diode and Fabrication Method Thereof |
摘要 |
A light emitting diode includes: a substrate; a light-emitting epitaxial layer, from bottom to up, laminated by semiconductor material layers of a first confinement layer, a light-emitting layer and a second confinement layer over the substrate; a current blocking layer over partial region of the light-emitting epitaxial layer; a transparent conducting structure over the current blocking layer that extends to the light-emitting epitaxial layer surface and is divided into a light-emitting region and a non-light-emitting region, in which, the non-light-emitting region corresponds to the current blocking layer with thickness larger than that of the light-emitting region, thus forming a good ohmic contact between this structure and the light-emitting epitaxial layer and reducing light absorption; and a P electrode over the non-light-emitting region of the transparent conducting structure, which guarantees current spreading performance and reduces working voltage and light absorption. |
申请公布号 |
US2015255682(A1) |
申请公布日期 |
2015.09.10 |
申请号 |
US201514718026 |
申请日期 |
2015.05.20 |
申请人 |
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
YIN LINGFENG;LIN SUHUI;ZHENG JIANSEN;HONG LINGYUAN;LIU CHUANGUI;OU YIDE;CHEN GONG |
分类号 |
H01L33/42;C23C14/58;C23C14/02;H01L33/00;C23C14/35 |
主分类号 |
H01L33/42 |
代理机构 |
|
代理人 |
|
主权项 |
1. A light emitting diode comprising: a substrate; a light-emitting epitaxial layer from bottom to up including semiconductor material layers of a first confinement layer, a light-emitting layer, and a second confinement layer over the substrate; a current blocking layer over a portion of the light-emitting epitaxial layer; a transparent conducting structure over the current blocking layer that extends to the light-emitting epitaxial layer surface and includes a light-emitting region and a non-light-emitting region, in which, the non-light-emitting region corresponds to the current blocking layer with a thickness larger than that of the light-emitting region, thereby ensuring current spreading performance and reducing working voltage and light absorption; and a P electrode over the non-light-emitting region of the transparent conducting structure. |
地址 |
Xiamen CN |