SEMICONDUCTOR MEMORY DEVICE

摘要

In accordance with an embodiment, a semiconductor memory device includes a substrate, first and second wirings on the substrate across each other, and a storage element at an intersection of the first and second wirings between the first and second wirings. The storage element includes first and second electrodes having first and second materials, respectively, a first film having a first dielectric constant, and a second film having a second dielectric constant lower than the first dielectric constant. The first film is formed on the first electrode. The second electrode is formed on the first film. The second film is disposed between the second electrode and the first film. An energy difference between a vacuum level and a Fermi level of the second material is equal to or more than an energy difference between the vacuum level and a Fermi level of the first material.

主权项

1. A semiconductor memory device comprising:
a substrate; first and second wirings disposed on the substrate across each other; and a storage element disposed at an intersection of the first and second wirings between the first and second wirings, the storage element comprising a first electrode electrically connected to the first wiring and comprising a first material, a first film formed on the first electrode, which comprises a first dielectric constant, a second electrode formed on the first film, which is electrically connected to the second wiring and comprises a second material, and a second film disposed between the second electrode and the first film, which comprises a second dielectric constant lower than the first dielectric constant, wherein an energy difference between a vacuum level and a Fermi level of the second material is equal to or more than an energy difference between the vacuum level and a Fermi level of the first material.