| 发明名称 |
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A display device includes a substrate comprising a display area and a non-display area. A gate line and a data line are disposed on the substrate. A thin film transistor is disposed on the display area and coupled to the gate line and the data line. A pad is disposed in the non-display area. A passivation layer is disposed on the thin film transistor and the pad. A pixel electrode is coupled to the thin film transistor. The passivation layer has a thickness that is smaller in the non-display area than in the display area, and the passivation layer has a thickness of about 0.1 μm to about 1 μm in the non-display area. |
| 申请公布号 |
US2015255493(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201514604480 |
申请日期 |
2015.01.23 |
| 申请人 |
Samsung Display Co., Ltd. |
发明人 |
SHIM Seung-Bo;KIM Bong-Yeon;WOO Jun-hyuk;KIM Jeong-Won;PARK Kwang-Woo |
| 分类号 |
H01L27/12;G03F1/26 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A display device comprising:
a substrate comprising a display area and a non-display area; a gate line and a data line disposed on the substrate; a thin film transistor disposed on the display area, the thin film transistor being coupled to the gate line and the data line; a pad disposed in the non-display area; a passivation layer disposed on the thin film transistor and the pad; and a pixel electrode coupled to the thin film transistor, wherein the passivation layer has a thickness that is smaller in the non-display area than in the display area, and the passivation layer has a thickness of about 0.1 μm to about 1 μm in the non-display area. |
| 地址 |
Yongin-City KR |
