METHODS AND APPARATUS TO FORM FIN STRUCTURES OF DIFFERENT COMPOSITIONS ON A SAME WAFER VIA MANDREL AND DIFFUSION

摘要

Methods and structures for forming finFETs of different semiconductor composition and of different conductivity type on a same wafer are described. Some finFET structures may include strained channel regions. FinFETs of a first semiconductor composition may be grown in trenches formed in a second semiconductor composition. Material of the second semiconductor composition may be removed from around some of the fins at first regions of the wafer, and may remain around fins at second regions of the wafer. A chemical component from the second semiconductor composition may be driven into the fins by diffusion at the second regions to form finFETs of a different chemical composition from those of the first regions. The converted fins at the second regions may include strain.

主权项

1. A method for making finFET structures on a semiconductor wafer, the method comprising:
forming trenches in a first semiconductor material on the wafer, wherein the first semiconductor material is in physical contact with a second semiconductor material that is of a different chemical composition than the first semiconductor material; epitaxially growing fins of the second semiconductor material in the trenches; and converting source, drain, and channel regions of a first plurality of the fins in the trenches to a chemical composition that includes a chemical species from the first semiconductor material.