发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device according to one embodiment is provided with a first metal substrate, a second metal substrate separated from the first metal substrate, a normally-off transistor of a silicon semiconductor provided on the first metal substrate, and a normally-on transistor of a nitride semiconductor provided on the second metal substrate.
申请公布号 US2015255453(A1) 申请公布日期 2015.09.10
申请号 US201514716968 申请日期 2015.05.20
申请人 Kabushiki Kaisha Toshiba 发明人 IKEDA Kentaro
分类号 H01L27/06;H01L23/492;H01L29/872;H01L29/778;H01L29/866 主分类号 H01L27/06
代理机构 代理人
主权项 1. A semiconductor device comprising: a first metal substrate; a second metal substrate separated from the first metal substrate; a normally-off transistor formed of silicon semiconductor and provided on the first metal substrate; and a normally-on transistor formed of nitride semiconductor and provided on the second metal substrate.
地址 Minato-ku JP