发明名称 INTEGRATED DEVICE COMPRISING HIGH DENSITY INTERCONNECTS AND REDISTRIBUTION LAYERS
摘要 Some novel features pertain to an integrated device (e.g., integrated package) that includes a base portion for the integrated device, a first die coupled to a first surface of the base portion, and an underfill between the first die and the base portion. The base portion includes a dielectric layer, and a set of redistribution metal layers. In some implementations, the integrated device further includes an encapsulation material that encapsulates the first die. In some implementations, the integrated device further includes a second die coupled to the first surface of the base portion. In some implementations, the integrated device further includes a set of interconnects on the base portion, the set of interconnects electrically coupling the first die and the second die. In some implementations, the first die includes a first set of interconnect pillars and the second die includes a second set of interconnect pillars.
申请公布号 US2015255416(A1) 申请公布日期 2015.09.10
申请号 US201414196817 申请日期 2014.03.04
申请人 QUALCOMM Incorporated 发明人 Kim Dong Wook;We Hong Bok;Lee Jae Sik;Gu Shiqun
分类号 H01L23/00;H01L23/31 主分类号 H01L23/00
代理机构 代理人
主权项 1. An integrated device comprising: a base portion for the integrated device, the base portion comprising: a dielectric layer; anda set of redistribution metal layers; a first die coupled to a first surface of the base portion; and an underfill between the first die and the base portion.
地址 San Diego CA US