| 主权项 |
1. A method comprising:
forming a gate on a substrate; forming a source-drain region on the substrate, wherein the source-drain region is adjacent to the gate; forming an inter-level dielectric layer above the substrate, above the source-drain region, and above the gate; forming a device contact, a first fuse contact, and a second fuse contact in the inter-level dielectric layer, the device contact is above the source-drain region and the device contact is in electrical connection with the source-drain region, the device contact is self-aligned to the gate; forming a fuse link above the first fuse contact and above the second fuse contact, the fuse link is in electrical connection with the first fuse contact and the fuse link is in electrical connection with the second fuse contact; forming a first metal via above the first fuse contact, the first metal via is in electrical connection with the first fuse contact, the first metal via is separated by a distance from the fuse link. |
