| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes insulating layers stacked in the shape of stairs, and conductive layers alternately stacked with the insulating layers, wherein the conductive layers each include a first region interposed between upper and lower insulating layers thereof, among the insulating layers, and a second region which extends from the first region and protrudes between the upper and lower insulating layers, and wherein a protruding part formed on a sidewall or an upper surface of the second region. |
| 申请公布号 |
US2015255385(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201414465573 |
申请日期 |
2014.08.21 |
| 申请人 |
SK hynix Inc. |
发明人 |
LEE Ki Hong;PYI Seung Ho;JEON Seok Min |
| 分类号 |
H01L23/528;H01L23/532;H01L23/522 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
insulating layers stacked in the shape of stairs; and conductive layers alternately stacked with the insulating layers, wherein the conductive layers each include a first region interposed between upper and lower insulating layers thereof, among the insulating, layers and a second region which extends from the first region and protrudes between the upper and lower insulating layers, and wherein a protruding part is formed on a side all or an upper surface of the second region. |
| 地址 |
Gyeonggi-do KR |
