SILICON-ON-INSULATOR HEAT SINK

摘要

An approach for sinking heat from a transistor is provided. A method includes forming a substrate contact extending from a first portion of a silicon-on-insulator (SOI) island to a substrate. The method also includes forming a transistor in a second portion of the SOI island. The method further includes electrically isolating the substrate contact from the transistor by doping the first portion of the SOI island.

主权项

1. A semiconductor structure, comprising:
a substrate; a buried insulator layer on the substrate; an island of a semiconductor layer on the buried insulator layer; a substrate contact extending from a first area of the island to the substrate through the buried insulator layer; and a transistor in a second area of the island, wherein the substrate contact comprises a material having a thermal conductivity that is greater than a thermal conductivity of the buried insulator layer; and the substrate contact is electrically isolated from the transistor.