| 发明名称 |
Semiconductor Device with a Passivation Layer and Method for Producing Thereof |
| 摘要 |
A semiconductor device includes a semiconductor body having a first surface, a contact electrode on the first surface, and a passivation layer on the first surface adjacent the contact electrode and partially overlapping the contact electrode. The passivation layer comprises a layer stack with a first layer comprising an oxide on the first surface, and a second layer comprising a nitride on the first layer. |
| 申请公布号 |
US2015255362(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201414200732 |
申请日期 |
2014.03.07 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Konrath Jens Peter;Hecht Christian;Rupp Roland;Kabakow Andre |
| 分类号 |
H01L23/31;H01L29/872;H01L29/808;H01L29/78;H01L21/56;H01L21/308;H01L29/66;H01L27/06;H01L23/29;H01L29/47;H01L21/283;H01L21/02;H01L21/28;H01L29/70 |
主分类号 |
H01L23/31 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor body comprising a first surface; a contact electrode on the first surface; and a passivation layer on the first surface adjacent the contact electrode and partially overlapping the contact electrode, wherein the passivation layer comprises a layer stack with a first layer comprising an oxide on the first surface, and a second layer comprising a nitride on the first layer. |
| 地址 |
Neubiberg DE |
