| 发明名称 |
FORMING SOURCE/DRAIN REGIONS WITH SINGLE RETICLE AND RESULTING DEVICE |
| 摘要 |
Methods for forming FinFET source/drain regions with a single reticle and the resulting devices are disclosed. Embodiments may include forming a first fin and a second fin above a substrate, forming a gate crossing over the first fin and the second fin, removing portions of the first fin and the second fin on both sides the gate, forming silicon phosphorous tops on the first fin and the second fin in place of the portions, removing the silicon phosphorous tops on the first fin, and forming silicon germanium tops on the first fin in place of the silicon phosphorous tops. |
| 申请公布号 |
US2015255353(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201414197267 |
申请日期 |
2014.03.05 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
WAN Jing;WEI Andy;LIU Jinping;HU Xiang;CHOI Dae-han;YANG Dae Geun;GAIRE Churamani;SEHGAL Akshey |
| 分类号 |
H01L21/8238;H01L27/092 |
主分类号 |
H01L21/8238 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a first fin and a second fin above a substrate; forming a gate crossing over the first fin and the second fin; removing portions of the first fin and the second fin on both sides the gate; forming silicon phosphorous tops on the first fin and the second fin in place of the portions; removing the silicon phosphorous tops on the first fin; and forming silicon germanium tops on the first fin in place of the silicon phosphorous tops. |
| 地址 |
Grand Cayman KY |
