INTEGRATED CIRCUITS INCLUDING CONTACTS FOR METAL RESISTORS AND METHODS FOR FABRICATING THE SAME

摘要

Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes etching an ILD layer of dielectric material overlying a semiconductor substrate that includes a device region to form first contact vias that expose active areas of the device region. The ILD layer is etched to form second contact vias that correspondingly expose a gate that is disposed in the device region and a patterned resistive metal-containing layer that is disposed in the ILD layer adjacent to the device region. The first contact vias and the second contact vias are filled with an electrically-conductive material to form first contacts that are in electrical communication with the active areas and second contacts that include a gate contact and a metal resistor contact that are in electrical communication with the gate and the patterned resistive metal-containing layer, respectively.

主权项

1. A method for fabricating an integrated circuit comprising:
etching an ILD layer of dielectric material overlying a semiconductor substrate that comprises a device region to form first contact vias that expose active areas of the device region; etching the ILD layer to form second contact vias that correspondingly expose a gate that is disposed in the device region adjacent to the active areas and a patterned resistive metal-containing layer that is disposed in the ILD layer adjacent to the device region; and filling the first contact vias and the second contact vias with an electrically-conductive material to form first contacts that are in electrical communication with the active areas and second contacts that include a gate contact and a metal resistor contact that are in electrical communication with the gate and the patterned resistive metal-containing layer, respectively.