发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To miniaturize contact holes, and to ensure electrode contacts in a semiconductor device even if the contact holes is the miniaturized contact holes.SOLUTION: A multilayer interlayer insulation film made of a silicified film and a resin material film is formed. Then, contact holes are formed. In this case, size of the contact holes formed in the silicified film is made smaller than size of the contact holes formed in the resin material film. This structure can make it easy to make contacts even if a pattern is complex.
申请公布号 JP2015164226(A) 申请公布日期 2015.09.10
申请号 JP20150107454 申请日期 2015.05.27
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;FUKUNAGA KENJI;SUZAWA HIDEOMI;HIROSUE MISAKO
分类号 H01L21/768;H01L21/336;H01L23/522;H01L23/532;H01L29/786 主分类号 H01L21/768
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