发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To miniaturize contact holes, and to ensure electrode contacts in a semiconductor device even if the contact holes is the miniaturized contact holes.SOLUTION: A multilayer interlayer insulation film made of a silicified film and a resin material film is formed. Then, contact holes are formed. In this case, size of the contact holes formed in the silicified film is made smaller than size of the contact holes formed in the resin material film. This structure can make it easy to make contacts even if a pattern is complex. |
申请公布号 |
JP2015164226(A) |
申请公布日期 |
2015.09.10 |
申请号 |
JP20150107454 |
申请日期 |
2015.05.27 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;FUKUNAGA KENJI;SUZAWA HIDEOMI;HIROSUE MISAKO |
分类号 |
H01L21/768;H01L21/336;H01L23/522;H01L23/532;H01L29/786 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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