SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

摘要

A substrate processing apparatus includes: a process chamber including a source gas supply and a reactive gas supply to process a plurality of substrates in the source gas supply and the reactive gas supply; a substrate placement unit rotating in the process chamber, wherein the plurality of substrates are placed on the substrate placement unit along a rotational direction thereof; a plasma generator to generate plasma in plasma generation chamber installed an upper portion of the reactive gas supply; a coil wound along an outer circumference of the plasma generation chamber, a portion of which adjacent to a sidewall of the plasma generation chamber has a constant curvature; a reactive gas supply system to supply a reactive gas to the reactive gas supply via the plasma generation chamber through a ceiling of the plasma generation chamber; and a source gas supply system to supply a source gas.

主权项

1. A substrate processing apparatus comprising:
a process chamber comprising a source gas supply region and a reactive gas supply region and configured to process a plurality of substrates in the source gas supply region and the reactive gas supply region; a substrate placement unit capable of rotating in the process chamber, wherein the plurality of substrates are placed on the substrate placement unit along a rotational direction thereof; a plasma generating unit configured to generate plasma in plasma generation chamber installed at an upper portion of the reactive gas supply region; a coil wound along an outer circumference of the plasma generation chamber, wherein a portion of the coil adjacent to a sidewall of the plasma generation chamber has a constant curvature; a reactive gas supply system configured to supply a reactive gas to the reactive gas supply region via the plasma generation chamber through a ceiling of the plasma generation chamber; and a source gas supply system configured to supply a source gas to the source gas supply region.