发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND POWER SUPPLY SYSTEM
摘要 A semiconductor integrated circuit device includes a first voltage terminal, a second voltage terminal, an output terminal, a high-side MOSFET connected between the first voltage terminal and the output terminal, a low-side MOSFET connected between the output terminal and the second voltage terminal and having first and second gate electrodes, a drive circuit that complementally switches on and off the high-side MOSFET and low-side MOSFET, and a second gate electrode control circuit that generates a second gate control signal supplied to the second gate electrode of the low-side MOSFET. The second gate electrode control circuit has a voltage generating circuit that supplies a negative voltage negative in polarity relative to a voltage at the source of the low-side MOSFET, to the second gate electrode of the low-side MOSFET.
申请公布号 US2015256072(A1) 申请公布日期 2015.09.10
申请号 US201414418934 申请日期 2014.01.31
申请人 Renesas Electronics Corporation 发明人 Kondo Daisuke;Tateno Koji;Kishita Yumi;Uno Tomoaki
分类号 H02M3/158 主分类号 H02M3/158
代理机构 代理人
主权项 1. A semiconductor integrated circuit device comprising: a first voltage terminal supplied with a first voltage; a second voltage terminal supplied with a second voltage different in voltage value from the first voltage; an output terminal; a first MOSFET having a first input electrode, a drain, and a source, the first MOSFET being connected between the first voltage terminal and the output terminal and electrically connecting the first voltage terminal to the output terminal according to a first input signal supplied to the first input electrode; a second MOSFET having a first input electrode, a drain, a source, and a second input electrode located closer to the drain than the first input electrode, the second MOSFET being connected between the second voltage terminal and the output terminal and electrically connecting the second voltage terminal to the output terminal according to a second input signal supplied to the first input electrode; a drive circuit connected to respective first input electrodes of the first MOSFET and the second MOSFET, the drive circuit generating the first input signal and the second input signal so that the first MOSFET and the second MOSFET are switched on and off complementally; and a first voltage generating circuit connected to the second input electrode of the second MOSFET, the first voltage generating circuit supplying a negative voltage negative in polarity relative to a voltage at the source of the second MOSFET, to the second input electrode.
地址 Kawasaki-shi, Kanagawa JP
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