| 主权项 |
1. A plasma processing apparatus for performing a plasma process on a substrate by plasma, the apparatus comprising:
a susceptor, having a substrate mounting portion for mounting thereon the substrate, to which a high frequency power is applied; a focus ring, disposed to surround the substrate mounted on the substrate mounting portion, including an outer ring having a top surface higher than a top surface of the substrate and an inner ring extending inwardly from the outer ring so as to allow at least a part of the inner ring to be positioned below a periphery of the substrate, the outer ring and the inner ring being formed as a single member; a dielectric ring positioned between the focus ring and the susceptor; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body maintained at a ground potential and positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by adjusting the dielectric constant of the dielectric ring through the use of the dielectric constant varying device, wherein the controller forms a first current route in which a first current flows from the susceptor to the substrate, from the substrate to the focus ring, and from the focus ring to the grounding body and a second current route in which a second current flows from the susceptor to the dielectric ring, from the dielectric ring to the focus ring, and from the focus ring to the grounding body, wherein the controller adjusts the dielectric constant of the dielectric ring to control the second current, thereby controlling the first current, and wherein the controller controls the top surface electric potential of the focus ring by controlling the first current. |
