发明名称 SEMICONDUCTOR CIRCUIT BOARD, SEMICONDUCTOR DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CIRCUIT BOARD
摘要 The present invention provides a semiconductor circuit board in which a conductor portion is provided on an insulating substrate, wherein a surface roughness of a semiconductor element-mounting section of the conductor portion is 0.3 μm or lower in arithmetic average roughness Ra, 2.5 μm or lower in ten-point average roughness Rzjis, 2.0 μm or smaller in maximum height Rz, and 0.5 μm or lower in arithmetic average waviness Wa. Further, assuming that a thickness of the insulating substrate is t1 and a thickness of the conductor portion is t2, the thickness of t1 and t2 satisfy a relation: 0.1≦t2/t1≦50. Due to above structure, even if an amount of heat generation of the semiconductor element is increased, there can be provided a semiconductor circuit board and a semiconductor device having excellent TCT characteristics.
申请公布号 US2015257252(A1) 申请公布日期 2015.09.10
申请号 US201314433342 申请日期 2013.10.01
申请人 KABUSHIKI KAISHA TOSHIBA ;TOSHIBA MATERIALS CO., LTD. 发明人 Kato Hiromasa;Hoshino Masanori
分类号 H05K1/02;H05K1/09;H01L21/48;H05K1/03;H01L23/498;H01L23/00 主分类号 H05K1/02
代理机构 代理人
主权项 1. A semiconductor circuit board in which a conductor portion is provided on an insulating substrate, wherein a surface roughness of a semiconductor element-mounting section of the conductor portion is 0.3 μm or lower in arithmetic average roughness Ra, 2.5 μm or lower in ten-point average roughness Rzjis, 2.0 μm or smaller in maximum height Rz, and 0.5 μm or lower in arithmetic average waviness Wa.
地址 Minato-Ku, Tokyo JP