发明名称 |
SEMICONDUCTOR CIRCUIT BOARD, SEMICONDUCTOR DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CIRCUIT BOARD |
摘要 |
The present invention provides a semiconductor circuit board in which a conductor portion is provided on an insulating substrate, wherein a surface roughness of a semiconductor element-mounting section of the conductor portion is 0.3 μm or lower in arithmetic average roughness Ra, 2.5 μm or lower in ten-point average roughness Rzjis, 2.0 μm or smaller in maximum height Rz, and 0.5 μm or lower in arithmetic average waviness Wa. Further, assuming that a thickness of the insulating substrate is t1 and a thickness of the conductor portion is t2, the thickness of t1 and t2 satisfy a relation: 0.1≦t2/t1≦50. Due to above structure, even if an amount of heat generation of the semiconductor element is increased, there can be provided a semiconductor circuit board and a semiconductor device having excellent TCT characteristics. |
申请公布号 |
US2015257252(A1) |
申请公布日期 |
2015.09.10 |
申请号 |
US201314433342 |
申请日期 |
2013.10.01 |
申请人 |
KABUSHIKI KAISHA TOSHIBA ;TOSHIBA MATERIALS CO., LTD. |
发明人 |
Kato Hiromasa;Hoshino Masanori |
分类号 |
H05K1/02;H05K1/09;H01L21/48;H05K1/03;H01L23/498;H01L23/00 |
主分类号 |
H05K1/02 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor circuit board in which a conductor portion is provided on an insulating substrate, wherein a surface roughness of a semiconductor element-mounting section of the conductor portion is 0.3 μm or lower in arithmetic average roughness Ra, 2.5 μm or lower in ten-point average roughness Rzjis, 2.0 μm or smaller in maximum height Rz, and 0.5 μm or lower in arithmetic average waviness Wa. |
地址 |
Minato-Ku, Tokyo JP |