| 发明名称 |
PURE MEMRISTIVE LOGIC GATE |
| 摘要 |
According to an embodiment of the invention there is provided a device and method. The device may include a pure memristive logic gate, wherein the pure memristive logic gate consists essentially of at least one input memristive device and an output memristive device that is coupled to and differs from the at least one memristive device; wherein the pure memristive device is controlled by a single control voltage. |
| 申请公布号 |
US2015256178(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201514641482 |
申请日期 |
2015.03.09 |
| 申请人 |
Technion Research and Development Foundation LTD. |
发明人 |
Kvatinsky Shahar;Belousov Dmitry;Liman Slavik;Wald Nimrod;Satat Guy |
| 分类号 |
H03K19/003;H03K19/00;H03K19/08 |
主分类号 |
H03K19/003 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A device that comprises a pure memristive logic gate, wherein the pure memristive logic gate consists essentially of at least one input memristive device and an output memristive device that (a) is coupled to the at least one memristive device, and (b) differs from the at least one memristive device; wherein the pure memristive device is controlled by a single control voltage. |
| 地址 |
Haifa IL |
