发明名称 GAS PERMEATION BARRIERS AND METHODS OF MAKING THE SAME
摘要 Barrier stacks according to embodiments of the present invention achieve good water vapor transmission rates with a reduced number of dyads (i.e., polymer layer/oxide layer couple). In some embodiments, the barrier stack includes one or more dyads comprising a first polymer decoupling layer and a second barrier layer on the first layer. An intervening tie layer is deposited between the first and second layers of at least one of the dyads. The intervening tie layer includes an inorganic oxide layer deposited between the polymer decoupling layer and barrier layer of the dyad. The barrier layer includes a silicon nitride layer deposited by an evaporative deposition technique such as chemical vapor deposition (CVD), for example plasma enhanced chemical vapor deposition (PECVD). The barrier stack including the intervening tie layer has a water vapor transmission rate that is lower than a water vapor transmission rate of a barrier stack not including the intervening tie layer.
申请公布号 US2015255749(A1) 申请公布日期 2015.09.10
申请号 US201514636070 申请日期 2015.03.02
申请人 SAMSUNG SDI CO., LTD. 发明人 Zeng Xianghui;Moro Lorenza;Boesch Damien
分类号 H01L51/52;H01L51/56 主分类号 H01L51/52
代理机构 代理人
主权项 1. A barrier stack, comprising: one or more dyads, each dyad comprising a first layer comprising a polymer or organic material, and a second layer comprising a silicon nitride barrier material; an intervening tie layer comprising an inorganic oxide between the first layer and the second layer of one or more of the one or more dyads.
地址 Yongin-si KR