| 发明名称 |
SEMICONDUCTOR DEVICE HAVING A GAP DEFINED THEREIN |
| 摘要 |
In a particular embodiment, a method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure. The method also includes etching a structure of the semiconductor device to create an opening, removing the sacrificial spacer via the opening, and depositing a material to close to define a gap. |
| 申请公布号 |
US2015255571(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201414341568 |
申请日期 |
2014.07.25 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Xu Jeffrey Junhao;Rim Kern;Zhu John Jianhong;Song Stanley Seungchul;Badaroglu Mustafa;Machkaoutsan Vladimir;Yang Da;Yeap Choh Fei |
| 分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming a first spacer structure on a dummy gate of a semiconductor device; forming a sacrificial spacer on the first spacer structure; etching a structure to create an opening; and removing the sacrificial spacer via the opening and depositing a material to close the opening to define a gap. |
| 地址 |
San Diego CA US |
