| 发明名称 |
METHODS OF FORMING PATTERNS IN SEMICONDUCTOR DEVICES |
| 摘要 |
Methods of forming a pattern in a semiconductor device may be provided. The methods may include sequentially forming a first hard mask layer and a second hard mask layer on an etching target layer including first and second regions, forming a first spacer layer on the second hard mask layer, forming a second hard mask pattern layer by etching the second hard mask layer using the first spacer layer, forming a second spacer layer on a sidewall of the second hard mask pattern layer, forming a first hard mask pattern layer by etching the first hard mask layer using the second spacer layer, and etching the etching target layer using the first hard mask pattern layer. |
| 申请公布号 |
US2015255304(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201414578723 |
申请日期 |
2014.12.22 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
KANG Yun Seung |
| 分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a pattern in a semiconductor device, the method comprising:
sequentially forming a first hard mask layer and a second hard mask layer on an etching target layer comprising first and second regions; forming a first spacer layer on the second hard mask layer; forming a second hard mask pattern layer by etching the second hard mask layer using the first spacer layer; forming a second spacer layer on a sidewall of the second hard mask pattern layer; forming a first hard mask pattern layer by etching the first hard mask layer using the second spacer layer; and etching the etching target layer using the first hard mask pattern layer. |
| 地址 |
Suwon-si KR |
