| 发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a nonvolatile semiconductor memory device is provided with a magnetoresistive effect element formed on a substrate, and a insulating film formed above the substrate to cover the magnetoresistive effect element. The insulating film is formed of a silicon nitride, and has a portion of a higher nitrogen concentration than a surface portion thereof. |
| 申请公布号 |
US2015255712(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201414312184 |
申请日期 |
2014.06.23 |
| 申请人 |
TSUBATA Shuichi |
发明人 |
TSUBATA Shuichi |
| 分类号 |
H01L43/12;H01L27/22;H01L43/02 |
主分类号 |
H01L43/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile semiconductor memory device comprising:
a magnetoresistive effect element formed on a substrate; and a insulating film formed above the substrate to cover the magnetoresistive effect element, the insulating film being formed of a silicon nitride and having a portion of a higher nitrogen concentration than a surface portion thereof. |
| 地址 |
Seoul KR |
