| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT WITH DISLOCATIONS |
| 摘要 |
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes proving a substrate. The substrate includes a gate stack over the substrate and source/drain regions separated by the gate stack. A first dislocation with a first pinch-point is formed within the source/drain region with a first depth. A second dislocation with a second pinch-point is formed within the source/drain region at a second depth. The second depth is substantial smaller than the first depth. |
| 申请公布号 |
US2015255602(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201414201413 |
申请日期 |
2014.03.07 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company. Ltd. |
发明人 |
JangJian Shiu-Ko;Wang Chun-Chieh;Chang Shih-Chieh;Chou Ying-Min |
| 分类号 |
H01L29/78;H01L21/02;H01L29/165;H01L29/417;H01L21/3105;H01L21/265;H01L29/66;H01L21/324 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor integrated circuit (IC), the method comprising:
providing a substrate comprising:
a gate stack over the substrate; andsource/drain regions separated by the gate stack; forming a first dislocation with a first pinch-point at a first depth of the source/drain region; and forming a second dislocation with a second pinch-point at a second depth of the source/drain region, wherein the second depth is substantial smaller than the first depth. |
| 地址 |
Hsin-Chu TW |
