| 摘要 |
According to one embodiment, a semiconductor device includes an optional first electrode, a second electrode, a first and a third semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third electrode, and a second insulating film. The first semiconductor region extends between the first electrode and the second electrode. The second semiconductor region extends between the first semiconductor region and the second electrode. The third semiconductor region extends between the second semiconductor region and the second electrode. The third semiconductor region has a dopant concentration higher than a dopant concentration of the first semiconductor region. The third electrode is in contact, via a first insulating film, with the first semiconductor region, the second semiconductor region, and the third semiconductor region. The third semiconductor region is disposed between the second insulating film and the third electrode. |
| 主权项 |
1. A semiconductor device comprising:
a first electrode; a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type provided on the first semiconductor region; a third semiconductor region of the first conductivity type located between and contacting the second semiconductor region and the first electrode, the third semiconductor region having a dopant concentration higher than a dopant concentration of the first semiconductor region; a second electrode, having a first insulating film thereover, being in contact, via the first insulating film, with the first semiconductor region, the second semiconductor region, and the third semiconductor region; and a second insulating film, the third semiconductor region being interposed between the second insulating film and the third electrode. |
