发明名称 |
METHOD FOR MANUFACTURING MOSFET |
摘要 |
A method for manufacturing a MOSFET, including: performing ion implantation, via a shallow trench surrounding an active region in a semiconductor substrate, into a first sidewall of the active region and into a second sidewall of the active region opposite to the first sidewall to form a first heavily doped region in the first sidewall and a second heavily doped region in the second sidewall; filling the shallow trench with an insulating material, to form a shallow trench isolation; forming a gate stack and an insulating layer on the substrate, wherein the insulating layer surrounds and caps the gate stack; forming openings in the substrate using the shallow trench isolation, the first and second heavily doped regions, and the insulating layer as a hard mask; and epitaxially growing a semiconductor layer with a bottom surface and sidewalls of each of the openings as a seed layer. |
申请公布号 |
US2015255577(A1) |
申请公布日期 |
2015.09.10 |
申请号 |
US201214430690 |
申请日期 |
2012.10.30 |
申请人 |
INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES |
发明人 |
Yin Haizhou;Zhu Huilong |
分类号 |
H01L29/66;H01L29/08;H01L29/06;H01L29/161;H01L21/266;H01L21/02;H01L21/306;H01L21/265;H01L21/762 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a MOSFET, comprising:
performing first ion implantation, via a shallow trench surrounding an active region in a semiconductor substrate, into a first sidewall of the active region, to form a first heavily doped region in the first sidewall; performing second ion implantation, via the shallow trench, into a second sidewall of the active region opposite to the first sidewall, to form a second heavily doped region in the second sidewall; filling the shallow trench with an insulating material, to form a shallow trench isolation for defining the active region for the MOSFET; forming a gate stack and an insulating layer on the semiconductor substrate, wherein the insulating layer serves as a spacer surrounding the gate stack and as a cap covering the gate stack; forming openings in the semiconductor substrate using the shallow trench isolation, the first heavily doped region, the second heavily doped region and the insulating layer as a hard mask; and epitaxially growing a semiconductor layer with a bottom surface and sidewalls of each of the openings as a seed layer. |
地址 |
Chaoyang District, Beijing CN |