发明名称 |
Method and Apparatus for Plasma Dicing a Semi-conductor Wafer |
摘要 |
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. |
申请公布号 |
US2015255297(A1) |
申请公布日期 |
2015.09.10 |
申请号 |
US201514721462 |
申请日期 |
2015.05.26 |
申请人 |
Plasma-Therm LLC |
发明人 |
Martinez Linnell;Pays-Volard David;Johnson Chris;Johnson David;Westerman Russell;Grivna Gordon M. |
分类号 |
H01L21/3065;H01L21/683;H01L21/687;H01L21/78 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
1. (canceled) |
地址 |
St. Petersburg FL US |