发明名称 Charged Particle Beam Device and Sample Preparation Method
摘要 Provided is a charged particle beam device provided with: a charged particle source; an objective lens for focusing a charged particle beam emitted from the charged particle source onto a sample; a detector for detecting a secondary charged particle emitted from the sample; a probe capable of coming into contact with the sample; a gas nozzle for emitting conductive gas to the sample; and a control unit for controlling the drive of the probe and gas emission from the gas nozzle, wherein before bringing the probe into contact with the sample after applying the charged particle beam to the sample to machine the sample, the control unit emits gas toward a machining position from the gas nozzle and applies the charged particle beam to form a conductive film on a machining portion of the sample, and the charged particle beam device is provided with a contact detection unit for determining that the conductive film formed on the machining portion and the probe have come into contact with each other.
申请公布号 US2015255250(A1) 申请公布日期 2015.09.10
申请号 US201314434687 申请日期 2013.10.09
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 Sato Takahiro;Morikawa Akinari;Sekihara Isamu
分类号 H01J37/317;G01N1/28;H01J37/28;H01J37/31;H01J37/30 主分类号 H01J37/317
代理机构 代理人
主权项
地址 Minato-ku, Tokyo JP