SEMICONDUCTOR DEVICE

摘要

[Problem] To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device with improved operating speed.;[Solving Means] A semiconductor device including a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth sub memory cell includes a first transistor, a second transistor, and a capacitor; a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor; one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor; the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor; and when j≧2, the jth sub memory cell is arranged over the j−1th sub memory cell.

主权项

1. A semiconductor device comprising:
a memory cell including first to cth (c is a natural number of 2 or more) sub memory cells, wherein: the jth (j is a natural number of 1 to c) sub memory cell includes a first transistor, a second transistor, and a capacitor, a first semiconductor layer included in the first transistor and a second semiconductor layer included in the second transistor include an oxide semiconductor, one of terminals of the capacitor is electrically connected to a gate electrode included in the second transistor, the gate electrode included in the second transistor is electrically connected to one of a source electrode and a drain electrode which are included in the first transistor, and when j≧2, the jth sub memory cell is arranged over the j−1th sub memory cell.