| 发明名称 |
Apparatus for manufacturing ingot and method of manufacturing ingot |
| 摘要 |
Disclosed are an apparatus for manufacturing an ingot and a method of manufacturing the ingot to control a concentration of dopant. The apparatus for manufacturing an ingot to intermittently or continuously feed silicon while an ingot is grown, includes: a crucible having a melting zone in which the silicon and dopant are melted; an inner wall surrounded by the crucible, and having a growth zone in which the melted silicon and the dopant are introduced so that the ingot is grown in the inner zone; and a feeding unit feeding the silicon into the melting zone, wherein a ratio of a feed rate of the silicon fed through the feeding unit to a growth rate of the ingot is changed. |
| 申请公布号 |
US2015252491(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201414257141 |
申请日期 |
2014.04.21 |
| 申请人 |
Kwon Hyun Goo;Yoon Yeo Kyun;Son Min Soo |
发明人 |
Kwon Hyun Goo;Yoon Yeo Kyun;Son Min Soo |
| 分类号 |
C30B15/20;C30B15/00 |
主分类号 |
C30B15/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus for manufacturing an ingot to intermittently or continuously feed silicon while an ingot is grown, the apparatus comprising:
a crucible having a melting zone in which the silicon and dopant are melted; an inner wall surrounded by the crucible, and having a growth zone in which the silicon and the dopant melted in the crucible are introduced so that the ingot is grown in the inner zone; and a feeding unit feeding the silicon into the melting zone, wherein a ratio of a feed rate of the silicon fed through the feeding unit to a growth rate of the ingot is changed. |
| 地址 |
Uiwang KR |
