| 发明名称 |
DEVICE AND METHOD FOR FABRICATING THIN SEMICONDUCTOR CHANNEL AND BURIED STRAIN MEMORIZATION LAYER |
| 摘要 |
A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer and processing the second semiconductor layer to form an amorphized material. A stress layer is deposited on the first semiconductor layer. The wafer is annealed to memorize stress in the second semiconductor layer by recrystallizing the amorphized material. |
| 申请公布号 |
US2015255603(A1) |
申请公布日期 |
2015.09.10 |
| 申请号 |
US201514717551 |
申请日期 |
2015.05.20 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;KULKARNI PRANITA;SHAHIDI GHAVAM G. |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate having a dielectric layer formed between a first semiconductor layer and a second semiconductor layer; a gate structure for a transistor device formed on the first semiconductor layer; and a memorization layer formed from a recrystallized material of the second semiconductor layer such that stress induced in the recrystallized material induces stress to a device channel formed below the gate structure in the first semiconductor layer. |
| 地址 |
ARMONK NY US |
