COMPONENT, FOR EXAMPLE NMOS TRANSISTOR, WITH ACTIVE REGION WITH RELAXED COMPRESSION STRESSES, AND FABRICATION METHOD

摘要

An integrated circuit includes a substrate and at least one NMOS transistor having, in the substrate, an active region surrounded by a trench insulating region. The transistor, active region and trench insulating region are covered by an additional insulating region. A metal contact extends through the additional insulating region to make contact with the trench insulating region. The metal contact may penetrate into the trench insulating region.

主权项

1. An integrated circuit, comprising:
a substrate including an active region delimited by a trench insulating region; a component unfavorably sensitive to stress arranged at least partially in the active region; an additional insulating region arranged over the component, the active region and the trench insulating region; and a contact region passing through said additional insulating region and contacting at least a top surface face of a portion of said trench insulating region; wherein said contact region is formed by at least one material different from a material forming said trench insulating region and said additional insulating region.