Guard Rings on Fin Structures

摘要

A method includes forming a gate stack over a semiconductor fin, wherein the semiconductor fin forms a ring, and etching a portion of the semiconductor fin not covered by the gate stack to form a recess. The method further includes performing an epitaxy to grow an epitaxy semiconductor region from the recess, forming a first contact plug overlying and electrically coupled to the epitaxy semiconductor region, and forming a second contact plug, wherein the second contact plug is overlying and electrically coupled to the gate stack.

主权项

1. A method comprising:
forming a semiconductor fin, wherein the semiconductor fin forms a ring; forming a plurality of gate stacks on sidewalls and a top surface of each of sides of the ring; epitaxially growing a plurality of epitaxy regions between the plurality of gate stacks; and forming a plurality of metal contact plugs, each being over, and electrically coupling to, one of the plurality of epitaxy regions.