发明名称 AMBIENT TEMPERATURE METAL DIRECT BONDING
摘要 PROBLEM TO BE SOLVED: To provide a bonded device structure.SOLUTION: A bonded device structure includes: a first substrate having a first pair of metal bonding pads 12 connecting with a device or a circuit and a first nonmetallic region 11 located adjacent to the metal bonding pads on the first substrate 10; a second substrate having a second pair of metal bonding pads located adjacent to the first pair of metal bonding pads connecting with the device or the circuit and a second nonmetallic region 14 located adjacent to the metal bonding pads 15 on the second substrate 13; and a contact bonded boundary surface between the first and second pairs of metal bonding pads which are formed by contact-bonding the first nonmetallic region to the second nonmetallic region. At least one of the first and second substrates may be elastically deformed.
申请公布号 JP2015164190(A) 申请公布日期 2015.09.10
申请号 JP20150040707 申请日期 2015.03.02
申请人 ZIPTRONIX INC 发明人 TONG QIN-YI;PAUL M ENGQUIST;ANTHONY SCOT ROSE
分类号 H01L21/02;H01L21/60;H01L21/98;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/02
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