发明名称 |
AMBIENT TEMPERATURE METAL DIRECT BONDING |
摘要 |
PROBLEM TO BE SOLVED: To provide a bonded device structure.SOLUTION: A bonded device structure includes: a first substrate having a first pair of metal bonding pads 12 connecting with a device or a circuit and a first nonmetallic region 11 located adjacent to the metal bonding pads on the first substrate 10; a second substrate having a second pair of metal bonding pads located adjacent to the first pair of metal bonding pads connecting with the device or the circuit and a second nonmetallic region 14 located adjacent to the metal bonding pads 15 on the second substrate 13; and a contact bonded boundary surface between the first and second pairs of metal bonding pads which are formed by contact-bonding the first nonmetallic region to the second nonmetallic region. At least one of the first and second substrates may be elastically deformed. |
申请公布号 |
JP2015164190(A) |
申请公布日期 |
2015.09.10 |
申请号 |
JP20150040707 |
申请日期 |
2015.03.02 |
申请人 |
ZIPTRONIX INC |
发明人 |
TONG QIN-YI;PAUL M ENGQUIST;ANTHONY SCOT ROSE |
分类号 |
H01L21/02;H01L21/60;H01L21/98;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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