发明名称 CONTROL CIRCUIT OF SEMICONDUCTOR MEMORY, MEMORY SYSTEM AND CONTROL SYSTEM OF SEMICONDUCTOR MEMORY
摘要 A control circuit of a semiconductor memory controls the semiconductor memory and configures a memory system with the semiconductor memory. The memory system is supplied with power from a power supply. The memory system transits between a first state and a second state in which a load current of the memory system is different from each other. The control circuit is configured to receive a terminal voltage of the power supply as a first terminal voltage when the memory system is in the first state. The control circuit is configured to receive a terminal voltage of the power supply as a second terminal voltage when the memory system is in the second state. The control circuit is configured to judge whether a difference between the first terminal voltage and the second terminal voltage is larger than a certain value.
申请公布号 US2015253827(A1) 申请公布日期 2015.09.10
申请号 US201414297963 申请日期 2014.06.06
申请人 Kabushiki Kaisha Toshiba 发明人 YANAGIDAIRA Kosuke
分类号 G06F1/26;G06F1/32 主分类号 G06F1/26
代理机构 代理人
主权项 1. A control circuit of a semiconductor memory that controls the semiconductor memory and that configures a memory system with the semiconductor memory, wherein the memory system is supplied with power from a power supply, and transits between a first state and a second state in which a load current of the memory system is different from each other, and the control circuit is configured to receive a terminal voltage of the power supply as a first terminal voltage when the memory system is in the first state, receive a terminal voltage of the power supply as a second terminal voltage when the memory system is in the second state, and judge whether a difference between the first terminal voltage and the second terminal voltage is larger than a certain value.
地址 Minato-ku JP