METHOD FOR FORMING A VIA STRUCTURE USING A DOUBLE-SIDE LASER PROCESS

摘要

Embodiments include a multi-layer apparatus comprising a first dielectric layer, a second dielectric layer, a third dielectric layer and a fourth dielectric layer, wherein one or more of the dielectric layers include metal layers. The multi-layer apparatus further comprises a first via coupling a first metal layer and a second metal layer, a second via coupling the second metal layer and a fourth metal layer, a third via coupling the first metal layer and the second metal layer, and a fourth via coupling the third metal layer and the fourth metal layer. The first via is contiguous with the second via and the third via is contiguous with the fourth via. At least some of the vias have different depths relative to one another.

主权项

1. A method of making a multilayer substrate, the method comprising:
providing a first dielectric layer; patterning a first side of the first dielectric layer to provide a first metal layer; patterning a second side of the first dielectric layer to provide a second metal layer; providing a second dielectric layer and a third dielectric layer; patterning a first side of the second dielectric layer to provide a third metal layer; patterning a first side of the third dielectric layer to provide a fourth metal layer; coupling a second side of the second dielectric layer to the first side of the first dielectric layer; coupling a second side of the third dielectric layer to the second side of the first dielectric layer; creating vias between the metal layers via a double-side laser process, wherein at least some of the vias have different depths relative to one another such that (i) a first via couples the first metal layer and the second metal layer and a second via couples the second metal layer and the fourth metal layer, and (ii) a third via couples the first metal layer and the second metal layer and a fourth via couples third metal layer and the fourth metal layer, and wherein (i) the first via is contiguous with the second via and (ii) the third via is contiguous with the fourth via.