method of modifying an n-type silicon substrate

摘要

A method of modifying a silicon substrate which is intended for use in a photovoltaic device, comprising the steps of providing an n-type silicon substrate having a bulk and exhibiting a front surface and a rear surface; and forming by liquid phase application dielectric layers on said front and rear surfaces. The dielectric layer formed at the rear surface is capable of acting as a reflector to enhance reflection of light into the bulk of the silicon substrate, and the dielectric layer formed at the front comprises oxygen, hydrogen and at least one metal or semimetal and is capable of releasing hydrogen into the bulk as well as onto the surfaces of the silicon substrate in order to provide hydrogenation and passivation. The present invention provides a low cost method of improving the electrical or optical performance, or both, of photovoltaic devices: an increase in the efficiency of the current extraction and reduction of recombination occur within the device.

主权项

1. A method of modifying a silicon substrate which is intended for use in a photovoltaic device, comprising the steps of
providing an n-type silicon substrate having a bulk and exhibiting a front surface and a rear surface; and forming by liquid phase application dielectric layers on said front and rear surfaces; wherein the dielectric layer formed at the rear surface is capable of acting as a reflector to enhance reflection of light into the bulk of the silicon substrate, and wherein the dielectric layer formed at the front comprises oxygen, hydrogen and at least one metal or semimetal and is capable of releasing hydrogen into the bulk as well as onto the surfaces of the silicon substrate in order to provide hydrogenation and passivation.