Sensing Circuits for Use In Low Power Nanometer Flash Memory Devices

摘要

Improved sensing circuits for use in low power nanometer flash memory devices are disclosed.

主权项

1. A sensing circuit for use in a memory device, comprising:
a memory data read block for sensing a selected memory cell; a memory reference read block for sensing a reference memory cell; a differential amplifier block comprising a first capacitor, a second capacitor, a precharge circuit, and an output; wherein the first capacitor is connected to the memory data read block and the differential amplifier block and the second capacitor is connected to the memory reference read block and the differential amplifier block; wherein the output of the differential amplifier block indicates a value stored in the selected memory cell.