SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DETECTING LEAK CURRENT

摘要

According to one embodiment, a semiconductor memory device includes a leak current detection circuit that includes: a detection input end connected to a word line; a first detection end; a coupling circuit connected between the detection input end and the first detection end; a first switching circuit that supplies a voltage to be a reference to the first detection end according to a control signal; and an output circuit that outputs a detection signal corresponding to a change in a voltage of the first detection end caused by the detection input end and the first detection end being coupled by the coupling circuit.

主权项

1. A semiconductor memory device comprising a leak current detection circuit that includes:
a detection input end connected to a word line; a first detection end; a coupling circuit connected between the detection input end and the first detection end, the coupling circuit electrically couples the detection input end and the first detection end according to a first control signal; a first switching circuit having an output end connected to the first detection end, the first switching circuit supplies a voltage to be a reference to the first detection end according to a second control signal; and an output circuit that outputs a detection signal corresponding to a change in a voltage of the first detection end caused by the detection input end and the first detection end being coupled by the coupling circuit responding to the first control signal.