NON-VOLATILE MEMORY INCLUDING REFERENCE SIGNAL PATH

摘要

Some embodiments include apparatuses and methods having a first memory element and a first select component coupled to the first memory element, a second memory element and a second select component coupled to the second memory element, and an access line shared by the first and second select components. At least one of the embodiments can include a circuit to generate a signal indicating a state of the second memory element based on a first signal developed from a first signal path through the first memory element and a second signal developed from a second signal path through the second memory element.

主权项

1. An apparatus comprising:
an access line; a first select component coupled to the access line, and a first variable resistance material element coupled to the first select component; a second select component coupled to the access line, and a second variable resistance material element coupled to the first second component; and a circuit to compare a first voltage generated based on a first current through the first variable resistance material element with a second voltage generated based on a second current through the second variable resistance material element.