发明名称 METHOD FOR PERFORMING MEMORY INTERFACE CONTROL OF AN ELECTRONIC DEVICE, AND ASSOCIATED APPARATUS
摘要 A method for performing memory interface control of an electronic device and an associated apparatus are provided, where the method includes the steps of: when it is detected that a phase difference between a data signal and a clock signal reaches a predetermined value, controlling the clock signal to switch from a first frequency to a second frequency, wherein both of the clock signal and the data signal are signals of a memory interface circuit of the electronic device, and the memory interface circuit is arranged for controlling a random access memory (RAM) of the electronic device; applying at least one phase shift to the data signal until a condition is satisfied; and controlling the clock signal to switch from the second frequency to the first frequency; wherein the memory interface circuit is calibrated with aid of the at least one phase shift.
申请公布号 US2015255129(A1) 申请公布日期 2015.09.10
申请号 US201414535299 申请日期 2014.11.06
申请人 MEDIATEK INC. 发明人 Chen Shang-Pin;Hsieh Bo-Wei
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
主权项 1. A method for performing memory interface control of an electronic device, the method comprising the steps of: when it is detected that a phase difference between a data signal and a clock signal reaches a predetermined value, controlling the clock signal to switch from a first frequency to a second frequency, wherein both of the clock signal and the data signal are signals of a memory interface circuit of the electronic device, and the memory interface circuit is arranged for controlling a random access memory (RAM) of the electronic device; applying at least one phase shift to the data signal until a condition is satisfied, wherein the at least one phase shift is applied to the data signal after the clock signal switches from the first frequency to the second frequency; and controlling the clock signal to switch from the second frequency to the first frequency, wherein the clock signal switches from the second frequency to the first frequency after the at least one phase shift is applied to the data signal; wherein the memory interface circuit is calibrated with aid of the at least one phase shift.
地址 Hsin-Chu TW