发明名称 |
Method of cleaning plasma processing apparatus |
摘要 |
<p>There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.</p> |
申请公布号 |
EP2916344(A1) |
申请公布日期 |
2015.09.09 |
申请号 |
EP20150157130 |
申请日期 |
2015.03.02 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KISHI, HIROKI;HASHIMOTO, MITSURU;SHIMODA, KEIICHI;NISHIMURA, EIICHI;SHIMIZU, AKITAKA |
分类号 |
H01J37/32;C23C16/44 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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