发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 <p>The present invention provides a plasma processing device and a plasma processing method using a spiral resonator suppressing a reflected wave. The plasma processing device of the present invention comprises: a processing chamber which is disposed inside a decompressable vacuum container, and wherein a plasma for processing a sample of an object to be processed disposed therein; a means for supplying gas for generating the plasma inside the processing chamber; a vacuum exhaust unit for exhausting the air inside the process chamber; a spiral resonant apparatus having a spiral resonant coil installed on the external side of the vacuum container, and an electrically grounded shield disposed on the external side of the spiral resonant coil; a high power supply of the variable frequency, which supplies high-frequency power in a predetermined range to the resonant coil. In the plasma processing device, an electrical length of the resonant coil is set to be an integer multiple of a first wavelength in the predetermined frequency. Furthermore, the plasma processing device includes a frequency matching unit capable of adjusting the frequency of the high frequency power to minimize the reflection power. A power feeding point of the spiral resonant coil is connected to a ground level by using a tunable capacitive device.</p>
申请公布号 KR20150102921(A) 申请公布日期 2015.09.09
申请号 KR20150120305 申请日期 2015.08.26
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 MAEDA KENJI;YOSHIOKA KEN;KAWASAKI HIROMICHI;SHIMOMURA TAKAHIRO
分类号 H01J37/32 主分类号 H01J37/32
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