发明名称 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
摘要 <p>Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber.</p>
申请公布号 JP5775947(B2) 申请公布日期 2015.09.09
申请号 JP20140070517 申请日期 2014.03.28
申请人 发明人
分类号 H01L21/316;C23C16/455;H01L21/318 主分类号 H01L21/316
代理机构 代理人
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