发明名称 |
SEMICONDUCTOR-ON-INSULATOR WITH BACKSIDE HEAT DISSIPATION |
摘要 |
Embodiments of the present invention provide for the dissipation of heat from semiconductor-on-insulator (SOI) structures. In one embodiment, a method for fabricating an integrated circuit is disclosed. In a first step, active circuitry is formed in an active layer of a SOI wafer. In a second step, substrate material is removed from a substrate layer disposed on a back side of the SOI wafer. In a third step, insulator material is removed from the back side of the SOI wafer to form an excavated insulator region. In a fourth step, a thermal dissipation layer is deposited on said excavated insulator region. The thermal dissipation layer is thermally conductive and electrically insulating. |
申请公布号 |
EP2454752(B1) |
申请公布日期 |
2015.09.09 |
申请号 |
EP20100734619 |
申请日期 |
2010.07.14 |
申请人 |
SILANNA SEMICONDUCTOR U.S.A., INC. |
发明人 |
NYGAARD, PAUL A.;MOLIN, STUART B.;STUBER, MICHAEL A. |
分类号 |
H01L21/78;H01L21/336;H01L21/84;H01L23/36;H01L23/367;H01L27/12;H01L29/786 |
主分类号 |
H01L21/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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