| 摘要 |
<p>Provided are: a method for producing a ²-Ga 2 O 3 substrate of which changes in donor concentration in a reducing atmosphere or an inert gas atmosphere are suppressed; and a method for producing a crystal laminate structure that can epitaxially grow a high-quality crystal film having low variability of quality in a reducing atmosphere or an inert gas atmosphere. The method for producing a ²-Ga 2 O 3 substrate includes a step for cutting out a ²-Ga 2 O 3 substrate from a ²-Ga 2 O 3 crystal containing a group IV element; annealing processing in an atmosphere containing a reducing atmosphere and/or an inert gas atmosphere is performed on the ²-Ga 2 O 3 crystal before cutting out the ²-Ga 2 O 3 substrate, or on the cut-out ²-Ga 2 O 3 substrate.</p> |
