发明名称 絶縁キャパシタを用いた容量絶縁方式の半導体リレー
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor relay comprised of a lot of semiconductor relay segments with small occupied areas. <P>SOLUTION: A semiconductor relay 1 is composed of an oscillation circuit 10, a booster circuit 20 and a charge/discharge circuit 30, which are configured in one chip. The semiconductor relay 1 includes: the oscillation circuit 10 that is connected to a first and a second input terminals T<SB POS="POST">i1</SB>, T<SB POS="POST">i2</SB>, oscillates in response to an input signal and that generates a signal; the booster circuit 20 that receives the signal of the oscillator circuit 10 and generates a voltage; the charge/discharge circuit 30 that charges and discharges the voltage generated by the booster circuit 20; and an output section 40 composed of MOSFETs 41a, 41b for output with the gate and source connected to the charge/discharge circuit 30. The drain terminals of the MOSFETs 41a, 41b for output are made to serve as a first and a second output terminals T<SB POS="POST">o1</SB>, T<SB POS="POST">o2</SB>. <P>COPYRIGHT: (C)2012,JPO&INPIT</p>
申请公布号 JP5776011(B2) 申请公布日期 2015.09.09
申请号 JP20100275397 申请日期 2010.12.10
申请人 发明人
分类号 H03K17/78 主分类号 H03K17/78
代理机构 代理人
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